Scholarships and Job Search

Advanced concepts such as vertical transistors, SOI-based devices (gate all-around, dual gate,…) as well as deep submicron devices (70, 50, 35 nm…) can be viewed as the technology of the next 5-10 years. They all involve extremely complex processing and detailed engineering of the dopant distributions and use short time anneals, laser activation, outdiffusion from silicides, selective epi-growth as technological processes to cope with the demands of ultra shallow junctions, extremely high activation, controlled underdiffusion etc.. Unfortunately most of these processes are not very well understood and their description/ incorporation in process simulators is rather primitive. The latter has led to a strong need for characterization of these distributions in 1,2, (3) dimensions with extreme spatial resolution (< 1 nm?), sensitivity and quantification accuracy.

Latest Application date: 2009-09-01
Financing: available
Type of Position: scholarship or salary
Link: http://www.imec.be/ovinter/static_student/student_EN.shtml
Research group: Department of Physics and Astronomy
Contact Person:

The contact person is contrary to the above, Mrs. Katrien Brees as indicated in the IMEC guidelines (phd@imec.be)